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Monolithic piezoelectric control of soliton microcombs.

Hybrid integrated photonics using bulk acoustic resonators. High-performance hybrid silicon and lithium niobate Mach–Zehnder modulators for 100 gbit s –1 and beyond. Integrated lithium niobate electro-optic modulators operating at CMOS-compatible voltages. Laser soliton microcombs heterogeneously integrated on silicon. Narrow-linewidth iii–v/Si/Si 3N 4 laser using multilayer heterogeneous integration. Our integrated, linear, magnetic-free, electrically driven optical isolator could be a key building block for integrated lasers and optical interfaces for superconducting circuits. The isolation remains constant over nearly 30 dB dynamic range of optical input power, showing excellent optical linearity. An isolation bandwidth of 700 MHz is obtained, determined by the optical resonance linewidth. A maximum of 10 dB isolation is achieved under 300 mW total radiofrequency power applied to three actuators, with minimum insertion loss of 0.1 dB. This design creates an effective rotating acoustic wave that allows indirect interband transition in only one direction among a pair of strongly coupled optical modes. The transmission reciprocity is broken by spatio-temporal modulation of a Si 3N 4 microring resonator with three AlN bulk acoustic wave resonators that are driven with a rotational phase. Here we demonstrate a magnetic-free optical isolator based on aluminium nitride (AlN) piezoelectric modulators monolithically integrated on low-loss Si 3N 4 PICs. Conventionally, they are realized based on the Faraday effect of magneto-optic materials under an external magnetic field however, it has been challenging to integrate magneto-optic materials that are not compatible with complementary metal–oxide–semiconductors and that require bulky external magnet. Yet, among all demonstrated functionalities for Si 3N 4 integrated photonics, optical non-reciprocal devices such as isolators and circulators have not been achieved. Low-loss Si 3N 4 PICs have been widely used for frequency comb generation, narrow-linewidth lasers, microwave photonics and photonic computing networks. Many materials have been developed, among which silicon nitride (Si 3N 4) has emerged as a leading platform particularly for nonlinear photonics. Integrated photonics enables signal synthesis, modulation and conversion using photonic integrated circuits (PICs).